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Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process
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SYSNO ASEP 0466446 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process Author(s) Babchenko, O. (SK)
Vanko, G. (SK)
Dzuba, J. (SK)
Ižák, Tibor (FZU-D) RID
Vojs, M. (SK)
Lalinský, T. (SK)
Kromka, Alexander (FZU-D) RID, ORCID, SAISource Title ASDAM 2016. - Danvers : IEEE, 2016 / Haščík Š. ; Dzuba J. ; Vanko G. - ISBN 978-150903083-5 Pages s. 157-160 Number of pages 4 s. Publication form Print - P Action International conference on advanced semiconductor devices and microsystems /11./ Event date 13.11.2016 - 16.11.2016 VEvent location Smolenice Country SK - Slovakia Event type WRD Language eng - English Country US - United States Keywords diamond ; GaN ; HEMT ; transistor ; metallization Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GP14-16549P GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000392530900039 EID SCOPUS 85011015021 DOI 10.1109/ASDAM.2016.7805919 Annotation The issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO2 materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on transistors with Ir and IrO2 Schottky contact metallization has been demonstrated and discussed. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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