InGaN/GaN multiple quantum well structures for scintillator application

0455030 - FZÚ 2016 RIV SE eng C - Conference Paper (international conference)
Hospodková, Alice - Nikl, Martin - Oswald, Jiří - Foltynski, B. - Pánek, D. - Brůža, P. - Hulicius, Eduard
InGaN/GaN multiple quantum well structures for scintillator application.
EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund: Nanometer Structure Consortium, 2015 - (Ghalamestani, S.; Lundfald, L.), s. 187-190
[EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund (SE), 07.06.2015-10.06.2015]
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : InGaN * GaN * MQW * scintillator
Subject RIV: BM - Solid Matter Physics ; Magnetism

Scintillator InGaN/GaN QW structure was prepared by MOVPE. The structure reported is a promising candidate for fast scintillator applications: the scintillation response characteristics are better compared to the currently widely used single crystal YAP:Ce or YAG:Ce scintillators. The radioluminescence decay time decreased 4 times from 16 ns to 4 ns when the QW thickness was decreased from 2.4 nm to 2 nm.
Permanent Link: http://hdl.handle.net/11104/0255683