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On the technological aspects of doped ZnO. Diamond heterojunction preparation and analysis
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SYSNO ASEP 0449863 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title On the technological aspects of doped ZnO. Diamond heterojunction preparation and analysis Author(s) Marton, M. (SK)
Mikolášek, M. (SK)
Bruncko, J. (SK)
Novotný, I. (SK)
Ižák, Tibor (FZU-D) RID
Kováčová, S. (SK)
Vojs, M. (SK)Source Title Nanosvet s vákuom. Nanoworld with vacuum. - Bratislava : Slovenská vákuová spoločnosť, 2015 / Michalka M. ; Vincze A. ; Veselý M. - ISBN 978-80-971179-6-2 Pages s. 20-24 Number of pages 4 s. Publication form Print - P Action Škola vákuovej techniky /18./ Event date 07.10.2015-11.10.2015 VEvent location Štrbské Pleso Country SK - Slovakia Event type EUR Language eng - English Country SK - Slovakia Keywords ZnO ; diamond ; heterojunction ; electrical properties Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) 7AMB14SK024 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation HFCVD and sputtering deposition techniques were used for preparation of rectifying p-n junction from ZnO (n) and BDD (p) layers. The properties of individual layers were optimized in order to obtain low doping level allowing the junction to operate as a diode. Adhesion and other properties of the diamond layers were optimized through the deposition conditions and use of an interlayer as well. Rectifying ratio of 55 was reached for the first prepared structures; nevertheless the technological procedures are perspective and capable of further optimization. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
Number of the records: 1