Mapping of dopants in silicon by injection of electrons

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SYSNO ASEP	0367163
Document Type	K - Proceedings Paper (Czech conf.)
R&D Document Type	The record was not marked in the RIV
Title	Mapping of dopants in silicon by injection of electrons
Author(s)	Hovorka, Miloš (UPT-D) Konvalina, Ivo (UPT-D)_{RID, ORCID, SAI} Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Number of authors	3
Source Title	Mikroskopie 2011. - Nové Město na Moravě : Československá mikroskopická společnost, 2011 / Frank L. ; Hozák P. - ISBN N S. 46
Number of pages	1 s.
Action	Mikroskopie 2011
Event date	17.02.2011-18.02.2011
VEvent location	Nové Město na Moravě
Country	CZ - Czech Republic
Event type	EUR
Language	eng - English
Country	CZ - Czech Republic
Keywords	mapping dopants ; semiconductors
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
CEZ	AV0Z20650511 - UPT-D (2005-2011)
Annotation	We have focused on planar p-type structures of various dopant densities, embedded In an n-type substrate. The samples were observed in UHV electron microscope with the cathode lens. Imaging by means of secondary electrons and its quantifiability was verified and the method was extended to very low energies.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2012

Number of the records: 1