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From Shelled Ge Nanowires to SiC Nanotubes
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SYSNO ASEP 0317786 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title From Shelled Ge Nanowires to SiC Nanotubes Title Od zabalených Ge nanodrátů k SiC nanotrubkám Author(s) Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Šubrt, Jan (UACH-T) SAI, RID
Klementová, Mariana (UACH-T) RID, SAI, ORCID
Rieder, M. (CZ)
Fajgar, Radek (UCHP-M) RID, ORCID, SAINumber of authors 5 Source Title Nanotechnology. - : Institute of Physics Publishing - ISSN 0957-4484
Roč. 20, č. 3 (2009),035606Number of pages 6 s. Language eng - English Country GB - United Kingdom Keywords chemical vapor deposition ; germanium nanowires ; nanotubes Subject RIV CF - Physical ; Theoretical Chemistry R&D Projects IAA400720616 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z40720504 - UCHP-M (2005-2011) AV0Z40320502 - UACH-T (2005-2011) UT WOS 000261795500015 DOI 10.1088/0957-4484/20/3/035606 Annotation Shelled germanium nanowires up to 100 nm in diameter and several micrometers in length were prepared by low pressure chemical vapor deposition (LPCVD) of tris(trimethylsilyl)germane (SiMe3)3GeH. Vapors of the precursor were deposited on tantalum substrates in an oven at 365 °C. Subsequently, the products were annealed at 700 °C in vacuum. The wires consist of a crystalline Ge core surrounded by a two-layer jacket. The presence of hexagonal Ge in the core was documented in some of the nanowires. The inner jacket is formed by amorphous germanium, the outer part by an Si/C material. By annealing at 900 °C, germanium in the core is expelled and nanotubes formed by the Si/C material remain. The samples were studied by SEM, HRTEM, EDX, FTIR and Raman spectroscopy, and the XRD technique. Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2009
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