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High-pass energy-filtered photoemission electron microscopy imaging of dopants in silicon
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SYSNO ASEP 0308203 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title High-pass energy-filtered photoemission electron microscopy imaging of dopants in silicon Title Studium vlastností dotovaného křemíku pomocí fotoemisní elektronové mikroskopie s využitím energiového filtru Author(s) Hovorka, Miloš (UPT-D)
Frank, Luděk (UPT-D) RID, SAI, ORCID
Valdaitsev, D. (DE)
Nepijko, S. (DE)
Elmers, H. (DE)
Schönhense, G. (DE)Source Title Journal of Microscopy. - : Wiley - ISSN 0022-2720
Roč. 230, č. 1 (2008), s. 42-47Number of pages 6 s. Language eng - English Country GB - United Kingdom Keywords dopants ; energy-filtered imaging ; PEEM ; silicon Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA102/05/2327 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20650511 - UPT-D (2005-2011) UT WOS 000254614600007 Annotation Differently doped areas in silicon can show strong electron-optical contrast in dependence on the dopant concentration and surface conditions. Photoemission electron microscopy is a powerful surface-sensitive technique suitable for fast imaging of doping-induced contrast in semiconductors. We report on the observation of Si (100) samples with n- and p-type doped patterns (with the dopant concentration varied from 1016 to 1019 cm-3) on a p- and n-type substrate (doped to 1015 cm-3), respectively. A high-pass energy filter of the entire image enabled us to obtain spectroscopic information, i.e. quantified photo threshold and related photoyield differences depending on the doping level. Measurements have confirmed the possibility of resolving areas at a high contrast even with the lowest dopant concentration when employing the energy filter. The influence of electron absorption phenomena on contrast formation is discussed. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2008
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