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Influence of rare-earth elements on InP-based semiconductor structures for radiation detectors
- 1.0304079 - URE-Y 20020134 CZ eng K - Conference Paper (Czech conference)
Grym, Jan - Procházková, Olga
Influence of rare-earth elements on InP-based semiconductor structures for radiation detectors.
Prague: Czech Technical University, 2002. CTU Reports., Vol. 5, 2002 Sp. Issue. ISBN 80-01-02511-X. In: Proceedings of Workshop 2002., s. 532-533
[Workshop 2002. Prague (CZ), 11.02.2002-13.02.2002 (W)]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043; GA MŠMT 300106513
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth elements * liquid phase epitaxial growth * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Preparation and characterization of InP epitaxial layers with Tb admixture in the growth melt is reported. Structural, electrical and optical properties of InP layers exhibit a signaficant dependence on the presence of Tb and its concentration in the melt. When increasing the concentration of Tb in the growth melt the reversal of electrical conductivity occurs.
Permanent Link: http://hdl.handle.net/11104/0114223
Number of the records: 1