Epitaxial rectrystalization of the Ni/MgO(001)interface

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SYSNO ASEP	0185815
Document Type	K - Proceedings Paper (Czech conf.)
R&D Document Type	Conference Paper
Title	Epitaxial rectrystalization of the Ni/MgO(001)interface
Author(s)	Vacík, Jiří (UJF-V)_{RID, ORCID, SAI} Naramoto, H. (JP) Yamamoto, S. (JP) Narumi, K. (JP) Havránek, Vladimír (UJF-V)_{RID, SAI, ORCID}
Source Title	Epitaxial rectrystalization of the Ni/MgO(001)interface. - Plzeň, 2002 s. 389-391
Number of pages	3 s.
Action	Konference českých a slovenských fyziků /14./
Event date	09.09.2002-12.09.2002
VEvent location	Plzeň
Country	CZ - Czech Republic
Event type	EUR
Language	eng - English
Country	CZ - Czech Republic
Keywords	Ni ; MgO ; epitaxy
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z1048901 - UJF-V
Annotation	Process of recrystallization of the epitaxially grown Ni layer deposited on the MgO(001) single crystal is studied. Thin Ni layer prepared by the vapor deposition of Ni on the MgO substrate kept were annealed between 500 and 1000 0C and systematically analyzed by Rutherford backscattering, X-ray diffraction and atomic force microscopy. Dramatic change in evolution of the crystalline quality was observed during the thermal treatment. The strain and defect density gradually decreased and at the temperature 1000 0C the strain-free Ni/MgO(001) interface was obtained.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2004

Number of the records: 1