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Low Temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) of TiN on Si Substrates

    1.
    SYSNO ASEP0179279
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleLow Temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) of TiN on Si Substrates
    Author(s) Nohava, Jiří (UFP-V)
    Jedrzejowski, P. (PL)
    Source TitleWorkshop ČVUT 2001. - Praha : ČVUT Praha, 2001 - ISBN 80-01-02335-4
    s. 458-459
    Number of pages2 s.
    ActionWorkshop ČVUT 2001.
    Event date05.02.2001-07.02.2001
    VEvent locationPraha
    CountryCZ - Czech Republic
    Event typeEUR
    Languageeng - English
    CountryCZ - Czech Republic
    KeywordsPECVD, titanum nitride, low temperature
    Subject RIVJK - Corrosion ; Surface Treatment of Materials
    CEZAV0Z2043910 - UFP-V
    WorkplaceInstitute of Plasma Physics
    ContactVladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975
    Year of Publishing2004

Number of the records: 1  

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