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Characterization of lasers with ë-InAs layers in GaAs
- 1.0133871 - FZU-D 20020050 RIV CZ eng C - Conference Paper (international conference)
Hazdra, P. - Voves, J. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav - Petříček, Otto - Kuldová, Karla
Characterization of lasers with ë-InAs layers in GaAs.
80-01-02511-X. In: Proceedings of Tenth Annual university-wide seminar WORKSHOP 2002. Praha: CTU Publishing House, 2002, s. 424-425. CTU Reports.
[Annual university-wide seminar WORKSHOP 2002 /10./. Praha (CZ), 11.02.2002-13.02.2002]
R&D Projects: GA ČR GA102/99/0414
Institutional research plan: CEZ:AV0Z1010914; CEZ:MSM 212300014
Keywords : semiconductor lasers * isovalent ë layers * InAs * GaAs * electroluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance of these ë-InAs layers was studied under pulse excitation in the wide range of current densities.
Permanent Link: http://hdl.handle.net/11104/0031822
Number of the records: 1