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Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: demonstration in current-induced switching

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    0097606 - FZÚ 2008 RIV US eng J - Journal Article
    Wunderlich, J. - Irvine, A.C. - Zemen, Jan - Holý, V. - Rushforth, A.W. - De Ranieri, E. - Rana, U. - Výborný, Karel - Sinova, J. - Foxon, C. T. - Campion, R. P. - Williams, D.A. - Gallagher, B. L. - Jungwirth, Tomáš
    Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: demonstration in current-induced switching.
    [Lokální kontrola magnetokrystalické anisotropie v GaMnAs mikrosoučástkách: ukázka na proudem indukovaném přepínání magnetizace.]
    Physical Review. B. Roč. 76, č. 5 (2007), 054424/1-054424/8. ISSN 1098-0121
    R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/06/0025; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠMT LC510
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : ferromagnetic semiconductors * magnetocrystalline anisotropy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.172, year: 2007

    Experiments and theoretical modeling are presented for lithographically patterned microchannels in GaMnAs.

    Experimentální a teoretické modelování efektů mřížkové relaxace v GaMnAs mikrokanálech.
    Permanent Link: http://hdl.handle.net/11104/0156710

     
     
Number of the records: 1  

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