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Diamond nucleation and growth on horizontally and vertically aligned Si substrates at low pressure in a linear antenna microwave plasma system

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    0499576 - FZÚ 2019 RIV CH eng J - Journal Article
    Domonkos, Mária - Ižák, Tibor - Varga, Marián - Potocký, Štěpán - Demo, Pavel - Kromka, Alexander
    Diamond nucleation and growth on horizontally and vertically aligned Si substrates at low pressure in a linear antenna microwave plasma system.
    Diamond and Related Materials. Roč. 82, Feb (2018), s. 41-49. ISSN 0925-9635. E-ISSN 1879-0062
    R&D Projects: GA ČR(CZ) GBP108/12/G108
    Institutional support: RVO:68378271
    Keywords : spontaneous nucleation * diamond thin films * chemical vapour deposition * low pressure linear antenna microwave plasma system
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2.290, year: 2018

    The spontaneous nucleation and early stages of diamond growth in a linear antenna microwave plasma reactor on horizontally (HorS) and vertically (VerS) aligned non-treated and seeded silicon substrates are studied for different deposition durations (5 and 10 h) and gas mixtures. The scanning electron microscope and atomic force microscope images reveal variation in the topographical properties of samples depending on the sample alignment and z-position on VerS.
    Permanent Link: http://hdl.handle.net/11104/0291768

     
     
Number of the records: 1  

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