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Influence of the growth temperature on the Si-V photoluminescence in diamond thin films

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    SYSNO ASEP0496473
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleInfluence of the growth temperature on the Si-V photoluminescence in diamond thin films
    Author(s) Dragounová, Kateřina (FZU-D) ORCID
    Ižák, Tibor (FZU-D) RID
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Potůček, Z. (CZ)
    Bryknar, Z. (CZ)
    Potocký, Štěpán (FZU-D) RID, ORCID
    Number of authors6
    Article number219
    Source TitleApplied Physics A - Materials Science & Processing. - : Springer - ISSN 0947-8396
    Roč. 124, č. 3 (2018), s. 1-5
    Number of pages5 s.
    Languageeng - English
    CountryDE - Germany
    Keywordscvd diamond ; silicon-vacancy centre ; photoluminescence ; microwave plasma
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGC15-22102J GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000427202900016
    EID SCOPUS85041726452
    DOI10.1007/s00339-018-1643-0
    AnnotationThe influence of growth temperature on the intensity of Si-V colour centres photoluminescence (PL) was studied in diamond thin films. The films were grown by a microwave plasma enhanced chemical vapour deposition system. The film quality and surface morphology were characterised by Raman spectroscopy and scanning electron microscopy, respectively. For selected samples, the temperature behaviour of steady-state PL emission spectra was studied within the range 11 ÷ 300 K as well. The PL properties are related to the film growth temperature. We found that 800 °C is the optimal growth temperature, at which the highest intensity of the Si-V centre PL was observed. For all the samples, the blue shift in the position of the Si-V centre PL zero-phonon line is observed with decreasing temperature, which is attributed to the effects of lattice contraction and quadratic electron–phonon coupling. The zero-phonon line narrowing is discussed regarding vibrations of the perturbed lattice.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2019
Number of the records: 1  

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