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Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing
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SYSNO ASEP 0492476 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing Author(s) Cajzl, J. (CZ)
Nekvindová, P. (CZ)
Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Remeš, Zdeněk (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Akhetova, B. (CZ)
Bottger, R. (DE)
Prajzler, V. (CZ)Number of authors 11 Article number 316 Source Title Micromachines. - : MDPI
Roč. 9, č. 7 (2018)Number of pages 14 s. Publication form Print - P Language eng - English Country CH - Switzerland Keywords nano-crystalline diamond ; erbium ; ion implantation ; luminescence ; Rutherford Backscattering Spectrometry ; Raman spectroscopy ; thin films Subject RIV JJ - Other Materials OECD category Nano-materials (production and properties) Subject RIV - cooperation Institute of Physics - Solid Matter Physics ; Magnetism R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 ; UJF-V - RVO:61389005 UT WOS 000441156000004 EID SCOPUS 85049606274 DOI 10.3390/mi9070316 Annotation We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 x 10(15) ions.cm(-2), followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 degrees C in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 mu m, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2019
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