Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

0454645 - FZÚ 2016 RIV SK eng J - Journal Article
Marton, M. - Mikolášek, M. - Bruncko, J. - Novotný, I. - Ižák, Tibor - Vojs, M. - Kozak, Halyna - Varga, Marián - Artemenko, Anna - Kromka, Alexander
Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction.
Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 66, č. 5 (2015), s. 277-281. ISSN 1335-3632. E-ISSN 1339-309X
R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠMT(CZ) 7AMB14SK024
Institutional support: RVO:68378271
Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.407, year: 2015

In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed.
Permanent Link: http://hdl.handle.net/11104/0255311