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Study of diamond film nucleation by ultrasonic seeding in different solutions

  1. 1.
    SYSNO ASEP0359679
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleStudy of diamond film nucleation by ultrasonic seeding in different solutions
    Author(s) Varga, M. (SK)
    Ižák, Tibor (FZU-D) RID
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Veselý, M. (SK)
    Hruška, Karel (FZU-D) RID, ORCID
    Michalka, M. (SK)
    Source TitleExtended Abstract Book of 7th Conference Solid State Surfaces and Interfaces. - Bratislava : Comenius University, 2010 / Brunner R. - ISBN 978-80-223-2938-5
    S. 61
    Number of pages1 s.
    ActionSolid State Surfaces and Interfaces /7./
    Event date22.11.2010-25.11.2010
    VEvent locationSmolenice
    CountrySK - Slovakia
    Event typeWRD
    Languageeng - English
    CountrySK - Slovakia
    Keywordsdiamond ; ultrasonic seeding ; nucleation ; SEM
    Subject RIVBM - Solid Matter Physics ; Magnetism
    CEZAV0Z10100521 - FZU-D (2005-2011)
    AnnotationIn this study we have investigated the nucleation of polycrystalline diamond thin films by ultrasonic seeding on Si and SiO2 substrates. During nucleation the clean substrates were moved into ultrasonic bath and seeded by a nanodiamond powder (≤10 nm) diluted in isopropyl alcohol or deionized water containing micro-or nanosized metal powder (nickel, cobalt and yttrium). The influence of different solutions on nucleation efficiency was investigated (i.e. nucleation density, distribution, homogeneity, etc.). For highlighting the nucleation centres and better evaluation of the nucleation process the nucleated samples were moved into microwave plasma enhanced chemical vapour deposition (MW CVD) reactor and short-time (10 min) diamond deposition was performed. The nucleation efficiency was characterized by Scanning Electron Microscopy (SEM) and the chemical composition of the grown diamond layer was investigated by Raman Spectroscopy.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2012
Number of the records: 1  

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