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Microcrystalline silicon preferential crystallographic orientation by polarized Raman micro-spectroscopy
- 1.0356009 - FZÚ 2011 JP eng C - Conference Paper (international conference)
Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Fejfar, Antonín - Kočka, Jan
Microcrystalline silicon preferential crystallographic orientation by polarized Raman micro-spectroscopy.
Proceedings of The Third International Forum on Multidisciplinary Education and Research for Energy Science. Tokyo: Tokyo Institute of Technology Global COE Program, 2010 - (Hirai, S.; Maruyama, T.), s. 21-22. ISBN N.
[International Forum on Multidisciplinary Education and Research for Energy Science /3./. Ishigaki, Okinawa (JP), 09.12.2010-14.12.2010]
R&D Projects: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
Grant - others:AVČR(CZ) M100100902
Institutional research plan: CEZ:AV0Z10100521
Keywords : thin films of amorpous silicon * microcrystalline silicon
Subject RIV: BM - Solid Matter Physics ; Magnetism
Thin films of amorphous and microcrystalline silicon are intensively studied mainly for thin film solar cells applications.
Permanent Link: http://hdl.handle.net/11104/0194642
Number of the records: 1