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Angle - resolved photoemission study of two phases of the GaAs(100)-c(4x4) surface
- 1.0315348 - FZÚ 2009 RIV GB eng J - Journal Article
Cukr, Miroslav - Jiříček, Petr - Bartoš, Igor - Sadowski, J.
Angle - resolved photoemission study of two phases of the GaAs(100)-c(4x4) surface.
[Studium dvou fází povrchu GaAs (100)-c(4x4) pomocí úhlově rozlišené fotoemise.]
Journal of Physics: Conference Series. Roč. 100, - (2008), 072017/1-072017/4. ISSN 1742-6588. E-ISSN 1742-6596
R&D Projects: GA AV ČR IAA100100628; GA ČR GA202/07/0601
Institutional research plan: CEZ:AV0Z10100521
Keywords : gallium arsenide * molecular beam epitaxy * photoelectron spectroscopy * surface reconstruction * surface phases * electron states
Subject RIV: BM - Solid Matter Physics ; Magnetism
We prepared by molecular beam epitaxy two chemically different phases of the same surface reconstruction on GaAs and found by photoelectron spectroscopy the correspondence between the bonding states and their recently proposed atomic models.
Pomocí molekulární epitaxe jsme připravili dvě chemicky odlišné fáze téže povrchové rekonstrukce na GaAs a studiem jejich fotoemise jsme nalezli soulad jejich vazebných stavů s dříve navrženými atomárními modely.
Permanent Link: http://hdl.handle.net/11104/0165573
Number of the records: 1