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Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor
- 1.0097612 - FZÚ 2008 RIV NL eng J - Journal Article
Wunderlich, J. - Jungwirth, Tomáš - Irvine, A.C. - Kaestner, B. - Shick, Alexander - Campion, R. P. - Williams, D.A. - Gallagher, B. L.
Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor.
[Anisotropní magnetorezistence v režimu Coulombovské blokády a napětím řízená změna nagnetizace v GaMnAs jednoelektronovém transistoru.]
Journal of Magnetism and Magnetic Materials. Roč. 310, - (2007), s. 1883-1888. ISSN 0304-8853. E-ISSN 1873-4766
R&D Projects: GA ČR GA202/05/0575; GA MŠMT LC510; GA ČR GEFON/06/E002
EU Projects: European Commission(XE) 015728 - NANOSPIN
Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520
Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.704, year: 2007
We observe low-field hysteretic magnetoresistance (MR) in (Ga,Mn)As single electron transistor which can exceed three orders of magnitude.
Pozorování silného napětí řízeného magnetorezistenčního jevu v GaMnAs jednoelektronovém transistoru.
Permanent Link: http://hdl.handle.net/11104/0156715
Number of the records: 1