Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes
1.
SYSNO ASEP
0043103
Document Type
C - Proceedings Paper (int. conf.)
R&D Document Type
Conference Paper
Title
Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes
Title
Výzkum teplotní závislosti elektrických vlastností Schottkyho diod na InP:Mn
Author(s)
Kozak, Halina (URE-Y) Sopko, B. (CZ) Žďánský, Karel (URE-Y)
Source Title
Proceedings of the 12th International Conference on Applied Physics of Condensed Matter. - Bratislava : Slovak University of Technology in Bratislava, 2006 / Weis M. ; Vajda J.
- ISBN 80-227-2424-6
Pages
s. 137-141
Number of pages
5 s.
Action
APCOM 2006 - Applied Physics of Condensed Matter /12./
Event date
21.06.2006-23.06.2006
VEvent location
Malá Lučivná
Country
SK - Slovakia
Event type
EUR
Language
eng - English
Country
SK - Slovakia
Keywords
Schottky diodes ; III-V semiconductors ; Hall effect
Subject RIV
JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects
KAN400670651 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ
AV0Z20670512 - URE-Y (2005-2011)
Annotation
Electrical properties of Schottky diodes prepared on InP:Mn samples were studied by capacitance-voltage (C-V), volt-ampere (I-V), DLTS and Hall effect measurements. The Hall effect measurements yield the binding energy 220 meV for dominant acceptor. By analyzing the I-V characteristics, ideality factors and reverse leakage currents were evaluated. The estimates of the doping concentration and the barrier height values were gained from C-V measurements. DLTS measurements did not show any characteristic peak.
