Strain-driven switching between antiferromagnetic states in frustrated antiferromagnet UO.sub.2./sub. probed by exchange bias effect

0585940 - FZÚ 2025 RIV DE eng J - Journal Article
Tereshina-Chitrova, Evgenia - Pourovskii, L.V. - Khmelevskyi, S. - Horák, L. - Bao, Z. - Macková, Anna - Malinský, Petr - Gouder, T. - Caciuffo, R.
Strain-driven switching between antiferromagnetic states in frustrated antiferromagnet UO₂ probed by exchange bias effect.
Advanced Functional Materials. Roč. 34, č. 13 (2024), č. článku 2311895. ISSN 1616-301X. E-ISSN 1616-3028
R&D Projects: GA MŠMT LM2023065; GA ČR(CZ) GA22-19416S
Institutional support: RVO:68378271 ; RVO:61389005
Keywords : epitaxial strain * exchange bias * frustrated antiferromagnetism * thin films * uranium dioxide
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Nuclear physics (UJF-V)
Impact factor: 19, year: 2022
Method of publishing: Open access

Frustrated antiferromagnets offer a captivating platform to study the intricate relationship of magnetic interactions, geometric constraints, and emergent phenomena. By controlling spin orientations, these materials can be tailored for applications in spintronics and quantum information processing. The research focuses on the interplay of magnetic and exchange anisotropy effects in artificial heterostructures based on a canonical frustrated antiferromagnet, UO2. The potential to manipulate the spin directions in this material and switch between distinct antiferromagnetic (AFM) states is investigated using substrate-induced strain. By employing many-body first-principles calculations magnetic configurations in the UO2 layers are identified.
Permanent Link: https://hdl.handle.net/11104/0353576