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Interface and Morphology Engineered Amorphous Si for Ultrafast Electrochemical Lithium Storage

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    SYSNO ASEP0583587
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleInterface and Morphology Engineered Amorphous Si for Ultrafast Electrochemical Lithium Storage
    Author(s) Farjana, Jaishmin Sonia (UFCH-W) ORCID, RID
    Haider, Golam (UFCH-W) ORCID, RID
    Ghosh, S. (ES)
    Müller, Martin (FZU-D) RID, ORCID
    Volochanskyi, Oleksandr (UFCH-W) ORCID, SAI
    Bouša, Milan (UFCH-W) RID, ORCID
    Plšek, Jan (UFCH-W) RID, ORCID
    Kamruddin, M. (IN)
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    Kalbáč, Martin (UFCH-W) RID, ORCID
    Frank, Otakar (UFCH-W) RID, ORCID
    Article number2311250
    Source TitleSmall. - : Wiley - ISSN 1613-6810
    (2024)
    Number of pages10 s.
    Languageeng - English
    CountryUS - United States
    Keywordsamorphous Si ; stress management ; Lithium-ion batteries
    Subject RIVCF - Physical ; Theoretical Chemistry
    OECD categoryPhysical chemistry
    Subject RIV - cooperationInstitute of Physics - Solid Matter Physics ; Magnetism
    R&D ProjectsGA21-09830S GA ČR - Czech Science Foundation (CSF)
    EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Research InfrastructureCzechNanoLab II - 90251 - Vysoké učení technické v Brně / Středoevropský technologický institut
    Method of publishingOpen access
    Institutional supportUFCH-W - RVO:61388955 ; FZU-D - RVO:68378271
    UT WOS001174197000001
    EID SCOPUS85186401207
    DOI10.1002/smll.202311250
    AnnotationUltrafast high-capacity lithium-ion batteries are extremely desirable for portable electronic devices, where Si is the most promising alternative to the conventional graphite anode due to its very high theoretical capacity. However, the low electronic conductivity and poor Li-diffusivity limit its rate capability. Moreover, high volume expansion/contraction upon Li-intake/uptake causes severe pulverization of the electrode, leading to drastic capacity fading. Here, interface and morphology-engineered amorphous Si matrix is being reported utilizing a few-layer vertical graphene (VG) buffer layer to retain high capacity at both slow and fast (dis)charging rates. The flexible mechanical support of VG due to the van-der-Waals interaction between the graphene layers, the weak adhesion between Si and graphene, and the highly porous geometry mitigated stress, while the three-dimensional mass loading enhanced specific capacity. Additionally, the high electronic conductivity of VG boosted rate-capability, resulting in a reversible gravimetric capacity of ≈1270 mAh g−1 (areal capacity of ≈37 µAh cm−2) even after 100 cycles at an ultrafast cycling rate of 20C, which provides a fascinating way for conductivity and stress management to obtain high-performance storage devices.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2025
    Electronic addresshttps://onlinelibrary.wiley.com/doi/10.1002/smll.202311250
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