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Optical triggering of a metal-insulator transition in neodymium nickelate films
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SYSNO ASEP 0572235 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Optical triggering of a metal-insulator transition in neodymium nickelate films Author(s) Stupakov, Alexandr (FZU-D) RID, ORCID
Kocourek, Tomáš (FZU-D) RID, ORCID, SAI
Vetokhina, Volha (FZU-D) ORCID
More Chevalier, Joris (FZU-D) ORCID
Chmelíčková, Hana (FZU-D) RID
Dejneka, Alexandr (FZU-D) RID, ORCID
Tyunina, Marina (FZU-D) ORCIDNumber of authors 7 Article number 112305 Source Title Materials Research Bulletin. - : Elsevier - ISSN 0025-5408
Roč. 165, Sep (2023)Number of pages 8 s. Language eng - English Country GB - United Kingdom Keywords oxides ; thin films ; epitaxial growth ; optical properties ; electrical properties Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects GA20-21864S GA ČR - Czech Science Foundation (CSF) LM2018096 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access with time embargo (01.09.2025) Institutional support FZU-D - RVO:68378271 UT WOS 000999344400001 EID SCOPUS 85157986084 DOI 10.1016/j.materresbull.2023.112305 Annotation We have studied photostimulated changes in the electrical resistivity of thin epitaxial films of neodymium nickelate NdNiO3 around its sharp metal-to-insulator transition. It is found that intense light irradiation strongly affects the film resistivity below the transition temperature, where the resistivity is repeatedly switched from high insulating values into low metal-phase levels. We establish that this strong photoresistive effect is likely caused by light-absorption induced heating rather than electronic excitations. Analysis of the temperature-dependent resistivity predicts a significant drop in the film thermal conductivity at the metal-to-insulator transition. The simultaneous abrupt change in two physical parameters: electrical resistivity and thermal conductivity, is responsible for a considerable magnitude of the observed photoresistive effect. This effect can be utilized in novel electronics applications, such as thin-film photodetectors or photoswitches. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://doi.org/10.1016/j.materresbull.2023.112305
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