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Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

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    SYSNO ASEP0569728
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleLight emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film
    Author(s) Trojánek, F. (CZ)
    Hamráček, K. (CZ)
    Hanák, M. (CZ)
    Varga, Marián (FZU-D) RID, ORCID
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Babčenko, Oleg (FZU-D) ORCID
    Ondič, Lukáš (FZU-D) RID, ORCID
    Malý, P. (CZ)
    Number of authors8
    Source TitleNanoscale. - : Royal Society of Chemistry - ISSN 2040-3364
    Roč. 15, č. 6 (2023), s. 2734-2738
    Number of pages5 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordspolycrystalline diamond ; silicon vacancy centers ; light emission dynamics ; pump and probe technique
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA19-14523S GA ČR - Czech Science Foundation (CSF)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000915297800001
    EID SCOPUS85146837540
    DOI10.1039/d2nr05470a
    AnnotationDiamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2024
    Electronic addresshttps://doi.org/10.1039/d2nr05470a
Number of the records: 1  

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