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Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film
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SYSNO ASEP 0569728 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film Author(s) Trojánek, F. (CZ)
Hamráček, K. (CZ)
Hanák, M. (CZ)
Varga, Marián (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Babčenko, Oleg (FZU-D) ORCID
Ondič, Lukáš (FZU-D) RID, ORCID
Malý, P. (CZ)Number of authors 8 Source Title Nanoscale. - : Royal Society of Chemistry - ISSN 2040-3364
Roč. 15, č. 6 (2023), s. 2734-2738Number of pages 5 s. Language eng - English Country GB - United Kingdom Keywords polycrystalline diamond ; silicon vacancy centers ; light emission dynamics ; pump and probe technique Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA19-14523S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000915297800001 EID SCOPUS 85146837540 DOI 10.1039/d2nr05470a Annotation Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://doi.org/10.1039/d2nr05470a
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