Number of the records: 1  

Effects of metal layers on chemical vapor deposition of diamond films

  1. 1.
    SYSNO ASEP0564910
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEffects of metal layers on chemical vapor deposition of diamond films
    Author(s) Izsák, T. (SK)
    Vanko, G. (SK)
    Babčenko, Oleg (FZU-D) ORCID
    Zaťko, B. (SK)
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Number of authors5
    Source TitleJournal of Electrical Engineering - Elektrotechnický časopis. - : Slovenská technická univerzita v Bratislave - ISSN 1335-3632
    Roč. 73, č. 5 (2022), s. 350-354
    Number of pages5 s.
    Languageeng - English
    CountrySK - Slovakia
    Keywordsdiamond ; CVD ; metallization ; iridium ; raman ; SEM
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryElectrical and electronic engineering
    R&D ProjectsLM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LUASK22147 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000883793600007
    EID SCOPUS85143055399
    DOI10.2478/jee-2022-0047
    AnnotationHere, we present the influence of thin metal (Ni, Ir, Au) layers on diamond growth by MWCVD employing two different concepts. In the first concept, a flat substrate (GaN) was initially coated with a thin metal layer, then exposed to the MWCVD process. In the second concept, the diamond film was firstly formed, then it was overcoated with the metal layer and finally, once again exposed to the diamond MWCVD. It was confirmed that the Ni thin films (15 nm) hinder the formation of diamond crystals resulting in the formation of an amorphous carbon layer. Contrary to this finding, the Ir layer resulted in a successful overgrowth by the fully closed diamond film. However, by employing concept 2 (ie hybrid diamond/metal/diamond composite), the thin Ir layer was found to be unstable and transferred into the isolated clusters, which were overgrown by the diamond film. Using the Au/Ir (30/15 nm) bilayer system stabilized the metallization and no diamond growth was observed on the metal layer.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://hdl.handle.net/11104/0336490
Number of the records: 1  

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