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Deposition of oxide nanostructures by nanosecond laser ablation of silicon in an oxygen-containing background gas
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SYSNO ASEP 0561204 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Deposition of oxide nanostructures by nanosecond laser ablation of silicon in an oxygen-containing background gas Author(s) Rodionov, A.A. (RU)
Starinskiy, S.V. (RU)
Shukhov, Y.G. (RU)
Bulgakov, Alexander (FZU-D) ORCIDNumber of authors 4 Source Title Thermophysics and Aeromechanics - ISSN 0869-8643
Roč. 28, č. 4 (2021), s. 549-554Number of pages 6 s. Language eng - English Country RU - Russian Federation Keywords pulsed laser deposition ; thin films ; non-stoichiometric silicon oxide ; laser ablation in background gas Subject RIV BH - Optics, Masers, Lasers OECD category Optics (including laser optics and quantum optics) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000729362600008 EID SCOPUS 85121119763 DOI 10.1134/S0869864321040089 Annotation The nanosecond laser ablation technique was used to synthesize thin silicon oxide films of various stoichiometry in vacuum and in a background gas. The local oxidation degree of specimens was evaluated using three different characterization methods. It was found that, on increasing the distance to the laser-plume axis, there occurred a monotonic increase in the oxygen content of the films due to their oxidation inhomogeneity. A profound decrease in ablated mass, related to an increased reverse flow of substance to the target, was found to occur when the pressure of the ambient mixture was increased from 20 to 60 Pa. A comparison was made of the oxidation efficiencies of the films heated at the stage of their synthesis and at the stage of annealing of already formed films. It is shown that the composition of the films could be controlled by varying the inert-gas pressure at the constant pressure of the chemically active component in ambient mixture.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://doi.org/10.1134/S0869864321040089
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