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PtSe.sub.2./sub. and MoS.sub.2./sub. active layers for gas sensing at room temperature
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SYSNO ASEP 0559038 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title PtSe2 and MoS2 active layers for gas sensing at room temperature Author(s) Kočí, Michal (FZU-D) ORCID
Izsák, Tibor (FZU-D) ORCID
Vanko, G. (SK)
Sojková, M. (SK)
Husák, M. (CZ)
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 6 Source Title Proceedings of ADEPT - ADEPT 2022. - Žilina : University of Žilina, 2022 / Feiler M. ; Ziman M. ; Kováčová S. ; Kováč, jr. J. - ISBN 978-80-554-1884-1 Pages s. 117-120 Number of pages 5 s. Publication form Print - P Action 10th International Conference on Advances in Electronic and Photonic Technologies - ADEPT 2022 Event date 20.06.2022 - 24.06.2022 VEvent location Tatranská Lomnica Country SK - Slovakia Event type EUR Language eng - English Country SK - Slovakia Keywords gas sensor ; PtSe2 ; MoS2 ; nanocrystalline diamond Subject RIV JB - Sensors, Measurment, Regulation OECD category Materials engineering R&D Projects LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation Gas sensors are nowadays an integral part of everyday life. New materials and fabrication processes allow the production of smaller, more accurate, cheaper, and more selective sensors. Here, gas sensing parameters of PtSe2, MoS2, and their heterostructures with nanocrystalline diamond (NCD) were measured at room temperature for oxidizing (NO2) and reducing (NH3) gases. The PtSe2 and MoS2 were prepared directly on SiO2/Si or NCD/SiO2/Si substrates by a simple selenization and a carbide-free one-zone sulfurization method. Advantageously, prepared heterostructure enhanced the gas sensing parameters and showed a notable electrical response to the examined gas types at room temperature. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023
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