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Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
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SYSNO 0557036 Title Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide Author(s) Kjeldby, S. B. (NO)
Azarov, A. (NO)
Nguyen, P. D. (NO)
Venkatachalapathy, V. (RU)
Mikšová, Romana (UJF-V) [ONF] RID, ORCID, SAI
Macková, Anna (UJF-V) [ONF] RID, ORCID, SAI
Kuznetsov, A. (NO)
Prytz, O. (NO)
Vines, L. (NO)Source Title Journal of Applied Physics. Roč. 131, č. 12 (2022). - : AIP Publishing Article number 125701 Document Type Článek v odborném periodiku Grant EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support UJF-V - RVO:61389005 Language eng Country US Keywords Electron energy loss spectroscopy * High resolution transmission electron microscopy * Rutherford backscattering spectroscopy Cooperating institutions Univerzita Jana Evangelisty Purkyně v Ústí nad Labem. Přírodovědecká fakulta (Czech Republic) URL https://doi.org/10.1063/5.0083858 Permanent Link http://hdl.handle.net/11104/0331142
Number of the records: 1