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Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
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SYSNO ASEP 0557036 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide Author(s) Kjeldby, S. B. (NO)
Azarov, A. (NO)
Nguyen, P. D. (NO)
Venkatachalapathy, V. (RU)
Mikšová, Romana (UJF-V) RID, ORCID, SAI
Macková, Anna (UJF-V) RID, ORCID, SAI
Kuznetsov, A. (NO)
Prytz, O. (NO)
Vines, L. (NO)Number of authors 9 Article number 125701 Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 131, č. 12 (2022)Number of pages 10 s. Publication form Print - P Language eng - English Country US - United States Keywords Electron energy loss spectroscopy ; High resolution transmission electron microscopy ; Rutherford backscattering spectroscopy OECD category Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Research Infrastructure CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i. Method of publishing Limited access Institutional support UJF-V - RVO:61389005 UT WOS 000779491400010 EID SCOPUS 85127357239 DOI 10.1063/5.0083858 Annotation Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (beta-Ga2O3) wafers, having ((2) over bar 01), (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV Si-28(+)-ions, applying fluences in the range of 1 x 10(14)-2 x 10(16) Si/cm(2), unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted beta-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having ((2) over bar 01 ) orientation were subjected to isochronal (30 min) anneals in the range of 300-1300 degrees C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 x 10(16) Si/cm(2) and annealed at 1100 degrees C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2023 Electronic address https://doi.org/10.1063/5.0083858
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