Number of the records: 1
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
- 1.KJELDBY, S. B., AZAROV, A., NGUYEN, P. D., VENKATACHALAPATHY, V., MIKŠOVÁ, R., MACKOVÁ, A., KUZNETSOV, A., PRYTZ, O., VINES, L. Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics. 2022, 131(12), 125701. ISSN 0021-8979. E-ISSN 1089-7550. Available: doi: 10.1063/5.0083858.
Number of the records: 1