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Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering
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SYSNO ASEP 0555694 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering Author(s) Das, Nirmal Kumar (UFP-V)
Kanclíř, Vít (UFP-V)
Mokrý, Pavel (UFP-V) RID
Žídek, Karel (UFP-V) ORCIDNumber of authors 4 Article number 024003 Source Title Journal of Optics. - : Institute of Physics Publishing - ISSN 2040-8978
Roč. 23, č. 2 (2021)Number of pages 6 s. Language eng - English Country GB - United Kingdom Keywords silicon nitride ; thin films ; ellipsometry ; second harmonic generation (SHG) ; bulk ; interface Subject RIV JK - Corrosion ; Surface Treatment of Materials OECD category Coating and films R&D Projects EF16_026/0008390 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA19-22000S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support UFP-V - RVO:61389021 UT WOS 000629544000001 EID SCOPUS 85103401451 DOI 10.1088/2040-8986/abe450 Annotation The nonlinear optical second harmonic generation (SHG) in Si3N4 has attracted considerable attention due to a variety of promising applications in optoelectronics. However, reports on SHG in Si3N4 thin films and microstructures lead to diverse conclusions about the SHG origin, pointing towards the Si3N4 bulk, as well as to the Si3N4-Si interface. Here we report on the measurement of polarization-resolved angle-dependent SHG in Si3N4 thin films in the reflective mode. This mode allowed us to measure the nonlinear response of Si3N4 thin films on the Si single crystal substrate. By measuring three samples deposited via ion beam sputtering, we were able to analyze the bulk and interface contributions. We have demonstrated that apart from the bulk SHG, the Si3N4-Si interface contributes with a significant amount of SHG for the thin sample (600 nm). Our result provides a link between the previous measurements in the Si3N4 thin films and on the microstructures. Workplace Institute of Plasma Physics Contact Vladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975 Year of Publishing 2022 Electronic address https://iopscience.iop.org/article/10.1088/2040-8986/abe450
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