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Morphology and optical properties of thin Cd.sub.3./sub.As.sub.2./sub. films of a dirac semimetal compound
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SYSNO ASEP 0547321 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Morphology and optical properties of thin Cd3As2 films of a dirac semimetal compound Author(s) Kovaleva, N. (RU)
Fekete, Ladislav (FZU-D) RID, ORCID
Chvostová, Dagmar (FZU-D) RID, SAI, ORCID
Muratov, A. (RU)Number of authors 4 Article number 1398 Source Title Metals. - : MDPI
Roč. 10, č. 10 (2020)Number of pages 9 s. Language eng - English Country CH - Switzerland Keywords dirac semimetals ; cadmium arsenide ; thin films ; atomic force microscopy ; spectroscopic ellipsometry Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000585150800001 EID SCOPUS 85094566655 DOI 10.3390/met10101398 Annotation Using atomic-force microscopy (AFM) and wide-band (0.02–8.5 eV) spectroscopic ellipsometry techniques, we investigated the morphology and optical properties of Cd3As2 films grown by non-reactive RF magnetron sputtering on two types of oriented crystalline substrates (100)p-Si and (001) a-Al2O3. The AFM study revealed the grainy morphology of the films due to island incorporation during the film growth. The complex dielectric function spectra of the annealed Cd3As2/Al2O3 films manifest pronounced interband optical transitions at 1.2 and 3.0 eV, in excellent agreement with the theoretical calculations for the body centered tetragonal Cd3As2 crystal structure.agreement with the theoretical calculations for the body centered tetragonal Cd3As2 crystal structure. We discovered that due to electronic excitations to the Cd(s) conical bands, the low-energy absorption edge of the annealed Cd3As2 films reveals a linear dependence. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address http://hdl.handle.net/11104/0323849
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