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Deposition of cobalt oxide films by reactive pulsed magnetron sputtering
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SYSNO ASEP 0541687 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Deposition of cobalt oxide films by reactive pulsed magnetron sputtering Author(s) Hippler, Rainer (FZU-D) ORCID
Čada, Martin (FZU-D) RID, ORCID, SAI
Kšírová, Petra (FZU-D) RID, ORCID
Olejníček, Jiří (FZU-D) RID, ORCID
Jiříček, Petr (FZU-D) RID, ORCID, SAI
Houdková, Jana (FZU-D) RID, ORCID
Wulff, H. (DE)
Kruth, A. (DE)
Helm, C.A. (DE)
Hubička, Zdeněk (FZU-D) RID, ORCID, SAINumber of authors 10 Article number 126590 Source Title Surface and Coatings Technology. - : Elsevier - ISSN 0257-8972
Roč. 405, Jan (2021)Number of pages 11 s. Language eng - English Country CH - Switzerland Keywords cobalt oxide film ; pulsed magnetron sputtering ; HiPIMS ; Raman spectroscopy ; XPS ; XRD ; electrical resistivity Subject RIV BL - Plasma and Gas Discharge Physics OECD category Fluids and plasma physics (including surface physics) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) FV20580 GA MPO - Ministry of Industry and Trade (MPO) GA19-00579S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000604583200062 EID SCOPUS 85096441240 DOI 10.1016/j.surfcoat.2020.126590 Annotation Cobalt oxide films were deposited with the help of reactive HiPIMS and mid-frequency pulsed magnetron sputtering (PMS) in argon gas at an argon gas pressure of 1 Pa and with different oxygen admixtures. The intensity of plasma ions, in particular Co+ and O+, is enhanced during HiPIMS compared to PMS and extends to larger ion energies. Films deposited on glass substrates were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. Crystal structure and electrical resistivity of as-deposited films were found to depend on the deposition conditions. Deposited films are compatible with a non-stoichiometric Co3O4 spinel type crystal structure with unoccupied cobalt sites. PMS produces films with a preferred lattice orientation. HiPIMS show large internal stress which relaxes during annealing. Electrical resistivity is several orders of magnitude smaller for films deposited by HiPIMS compared to PMS. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address https://doi.org/10.1016/j.surfcoat.2020.126590
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