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Oxygen vacancies in perovskite oxide piezoelectrics
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SYSNO ASEP 0539022 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Oxygen vacancies in perovskite oxide piezoelectrics Author(s) Tyunina, Marina (FZU-D) ORCID Number of authors 1 Article number 5596 Source Title Materials. - : MDPI
Roč. 13, č. 24 (2020), s. 1-11Number of pages 11 s. Language eng - English Country CH - Switzerland Keywords perovskite oxide ; ferroelectric ; oxygen vacancy ; electronic ; semiconductor Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA19-09671S GA ČR - Czech Science Foundation (CSF) EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000602950600001 EID SCOPUS 85097595865 DOI 10.3390/ma13245596 Annotation The excellent electro-mechanical properties of perovskite oxide ferroelectrics make these materials major piezoelectrics. Oxygen vacancies are believed to easily form, migrate, and strongly affect ferroelectric behavior and, consequently, the piezoelectric performance of these materials and devices based thereon. Mobile oxygen vacancies were proposed to explain high-temperature chemical reactions half a century ago. Today the chemistry-enabled concept of mobile oxygen vacancies has been extrapolated to arbitrary physical conditions and numerous effects and is widely accepted. Here, this popular concept is questioned. The concept is shown to conflict with our modern physical understanding of ferroelectrics. Basic electronic processes known from mature semiconductor physics are demonstrated to explain the key observations that are groundlessly ascribed to mobile oxygen vacancies. The concept of mobile oxygen vacancies is concluded to be misleading.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0316764
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