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Functional nano–structuring of thin silicon nitride membranes
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SYSNO ASEP 0512017 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Functional nano–structuring of thin silicon nitride membranes Author(s) Matějka, Milan (UPT-D) RID, ORCID, SAI
Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Řiháček, Tomáš (UPT-D) RID, ORCID
Knápek, Alexandr (UPT-D) RID, ORCID, SAI
Kolařík, Vladimír (UPT-D) RID, ORCID, SAINumber of authors 5 Source Title 5th IMAPS Flash Conference. Book of Abstracts. - Brno : University of Technology, 2019
S. 74-75Number of pages 2 s. Publication form Print - P Action International Microelectronics Assembly and Packaging Society Flash Conference /5./. IMAPS Event date 24.10.2019 - 25.10.2019 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering Institutional support UPT-D - RVO:68081731 Annotation The silicon nitride (SiN) films are typically used in semiconductor industry as a dielectric or masking layer. SiN films are commonly used as well as a base material for membrane fabrication that can be used in various microelectronic and micro optic devices (MEMS, MOMS). While the basic procedure of membrane fabrication is well described, what brings new technological challenges is the micro– and nanopatterning of its surface. Such membranes with surface modifications can have both new functionality and possible applications, e.g. modify electromagnetic radiation or charged particle beams distribution, phase or spectrum. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2020
Number of the records: 1