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Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond
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SYSNO ASEP 0511336 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Dragounová, K. (CZ)
Ashcheulov, Petr (FZU-D) ORCID, RID
Taylor, Andrew (FZU-D) RID, ORCID
Mortet, Vincent (FZU-D) RID, ORCID
Poruba, Aleš (FZU-D) RIDNumber of authors 8 Article number 1900241 Source Title Physica Status Solidi A : Applications and Materials Science. - : Wiley - ISSN 1862-6300
Roč. 216, č. 21 (2019), s. 1-6Number of pages 6 s. Language eng - English Country DE - Germany Keywords silicon carbide ; boron-doped diamond ; diode ; photothermal deflection spectroscopy ; Raman spectroscopy ; infrared spectroscopy ; current-voltage characteristics Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GC19-02858J GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000483266600001 EID SCOPUS 85071032379 DOI 10.1002/pssa.201900241 Annotation Hydrogenated amorphous substoichiometric silicon carbide (a-Si1-xCx:H) thin films and diodes with low carbon content were prepared from a mixture of H2, SiH4 and CH4 by plasma enhanced chemical vapour deposition at a relatively high temperature of 450C on semi-transparent conductive boron-doped nanocrystalline diamond (B-NCD) with an underlying Ti grid. Vibration spectra indicate that CH4 prevents Si crystallization and confirms an increasing carbon content up to x=0.1 for samples grown with SiH4/CH4 flows up to 1:3. Dark current-voltage characteristics of B-NCD/a-Si1-xCx:H diodes show a rectifying ratio of about four orders at ±1 V. However, under white light illumination an energy conversion efficiency of 4% is limited by a low fill factor, the high serial resistivity of B-NCD electrode and the s-shape near the open circuit voltage.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address https://doi.org/10.1002/pssa.201900241
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