0502820 - FZÚ 2019 RIV GB eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Jarý, Vítězslav - Dominec, Filip - Slavická Zíková, Markéta - Hájek, František - Hulicius, Eduard - Vetushka, Aliaksi - Ledoux, G. - Dujardin, C. - Nikl, Martin
Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs.
CrystEngComm. Roč. 21, č. 2 (2019), s. 356-362. ISSN 1466-8033. E-ISSN 1466-8033
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : InGaN * MOVPE * QW number
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.117, year: 2019 ; AIS: 0.527, rok: 2019
Method of publishing: Open access with time embargo
DOI: https://doi.org/10.1039/C8CE01830H
Permanent Link: http://hdl.handle.net/11104/0294704