HUBÁČEK, T., HOSPODKOVÁ, A., KULDOVÁ, K., OSWALD, J., PANGRÁC, J., JARÝ, V., DOMINEC, F., SLAVICKÁ ZÍKOVÁ, M., HÁJEK, F., HULICIUS, E., VETUSHKA, A., LEDOUX, G., DUJARDIN, C., NIKL, M. Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs. CrystEngComm. 2019, 21(2), 356-362. ISSN 1466-8033. E-ISSN 1466-8033. Available: https://doi.org/10.1039/C8CE01830H