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Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
- 1.HUBÁČEK, Tomáš, HOSPODKOVÁ, Alice, KULDOVÁ, Karla, OSWALD, Jiří, PANGRÁC, Jiří, JARÝ, Vítězslav, DOMINEC, Filip, SLAVICKÁ ZÍKOVÁ, Markéta, HÁJEK, František, HULICIUS, Eduard, VETUSHKA, Aliaksi, LEDOUX, G., DUJARDIN, C., NIKL, Martin. Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs. CrystEngComm. 2019, 21(2), 356-362. ISSN 1466-8033. E-ISSN 1466-8033. Available: https://doi.org/10.1039/C8CE01830H
Number of the records: 1