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Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

  1. 1.
    HUBÁČEK, Tomáš, HOSPODKOVÁ, Alice, KULDOVÁ, Karla, OSWALD, Jiří, PANGRÁC, Jiří, JARÝ, Vítězslav, DOMINEC, Filip, SLAVICKÁ ZÍKOVÁ, Markéta, HÁJEK, František, HULICIUS, Eduard, VETUSHKA, Aliaksi, LEDOUX, G., DUJARDIN, C., NIKL, Martin. Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs. CrystEngComm. 2019, 21(2), 356-362. ISSN 1466-8033. E-ISSN 1466-8033. Available: https://doi.org/10.1039/C8CE01830H
Number of the records: 1  

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