Number of the records: 1  

TaS.sub.3./sub. nanofibers: layered trichalcogenide for high-performance electronic and sensing devices

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    SYSNO ASEP0497758
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleTaS3 nanofibers: layered trichalcogenide for high-performance electronic and sensing devices
    Author(s) Mayorga-Martinez, C. C. (SG)
    Sofer, Z. (CZ)
    Luxa, J. (CZ)
    Huber, Š. (CZ)
    Sedmidubský, D. (CZ)
    Brázda, Petr (FZU-D) RID, ORCID
    Palatinus, Lukáš (FZU-D) RID, ORCID
    Milkulics, M. (DE)
    Lazar, P. (CZ)
    Medlín, R. (CZ)
    Pumera, M. (SG)
    Number of authors11
    Source TitleACS Nano. - : American Chemical Society - ISSN 1936-0851
    Roč. 12, č. 1 (2018), s. 464-473
    Number of pages10 s.
    Publication formPrint - P
    Languageeng - English
    CountryUS - United States
    Keywordslayered trisulfide ; gas sensor ; photodetector ; field-effect transistor ; air pollutants
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000423495200050
    EID SCOPUS85039051539
    DOI10.1021/acsnano.7b06853
    AnnotationLayered materials, like transition metal dichalcogenides, exhibit broad spectra with outstanding properties with huge application potential, whereas another group of related materials, layered transition metal trichalcogenides, remains unexplored. Here, we show the broad application potential of this interesting structural type of layered tantalum trisulfide prepared in a form of nanofibers. This material shows tailorable attractive electronic properties dependent on the tensile strain applied to it. Structure of this so-called orthorhombic phase of TaS3 grown in a form of long nanofibers has been solved and refined. Taking advantage of these capabilities, we demonstrate a highly specific impedimetric NO gas sensor based on TaS3 nanofibers as well as construction of photodetectors with excellent responsivity and field-effect transistors. Various flexible substrates were used for the construction of a NO gas sensor.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2019
Number of the records: 1  

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