Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects: XRD experiments and numerical simulations

0496201 - FZÚ 2019 PL eng A - Abstract
Stránská Matějová, J. - Horák, L. - Minárik, P. - Holý, V. - Hospodková, Alice - Grzanka, E. - Domagala, J. - Leszczynski, M.
Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects: XRD experiments and numerical simulations.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 181-181.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Institutional support: RVO:68378271
Keywords : InGaN/GaN * V-pit defects * XRD * epilayers
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

Formation of V-pit defects is a commonly observed phenomenon in InGaN epilayers. However, the exact mechanism of V-pit formation remains unclear in some aspects.TEM images from numerous studies show, that the V-pits emerge from the point, where a threading dislocation from GaN substrate intersects the boundary between the substrate and the layer. Neverless, it was not confirmed, that all the V-pits and all the threading dislocations at interface act in this way.

Permanent Link: http://hdl.handle.net/11104/0289027