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InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties
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SYSNO 0492160 Title InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Hývl, Matěj (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Ledoux, G. (FR)
Dujardin, C. (FR)Corespondence/senior Hospodková, Alice - Korespondující autor Source Title Physica Status Solidi B : Basic Solid State Physics. Roč. 255, č. 5 (2018), s. 1-5. - : Wiley Article number 1700464 Document Type Článek v odborném periodiku Grant LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-11769S GA ČR - Czech Science Foundation (CSF) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic 690599, XE - EU countries Institutional support FZU-D - RVO:68378271 Language eng Country DE Keywords MOVPE * nitrides * scintillator * quantum well * cathodoluminescence Permanent Link http://hdl.handle.net/11104/0285718 File Download Size Commentary Version Access 0492160.pdf 4 492.5 KB Author’s postprint open-access
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