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InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties
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SYSNO ASEP 0492160 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Hývl, Matěj (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Ledoux, G. (FR)
Dujardin, C. (FR)Number of authors 9 Article number 1700464 Source Title Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
Roč. 255, č. 5 (2018), s. 1-5Number of pages 5 s. Language eng - English Country DE - Germany Keywords MOVPE ; nitrides ; scintillator ; quantum well ; cathodoluminescence Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-11769S GA ČR - Czech Science Foundation (CSF) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000432028400021 EID SCOPUS 85038810143 DOI 10.1002/pssb.201700464 Annotation Luminescence results on InGaN/GaN MQW structures with 10 and 30QWs were obtained. The aim is to increase the intensity of faster blue QW emission and decrease the luminescence of the QW defect band, showing a slower luminescence decay time, which is undesired for fast scintillator applications. We demonstrate that increasing the number of InGaN QWs is an efficient method to reach this goal. The luminescence improvement of the sample with higher number of QWs is explained by the influence of the increased size of V-pits with increased QW number. Thinner QWs on the side wall of V-pits serve as barriers which separate carriers from dislocations penetrating through the V-pit centre, supressing thus the non-radiative and radiative recombination on defects. Based on cathodoluminescence (CL) results, the scintillator structure design is discussed. Scintillator structures with higher number of QWs can take advantage of both, improved luminescence efficiency and thicker active region. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
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