Number of the records: 1
InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties
- 1.Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Hývl, Matěj - Dominec, Filip - Ledoux, G. - Dujardin, C.
InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-5, č. článku 1700464. ISSN 0370-1972. E-ISSN 1521-3951
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
http://hdl.handle.net/11104/0285718
Number of the records: 1