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InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties
- 1.Hospodková, A., Hubáček, T., Oswald, J., Pangrác, J., Kuldová, K., Hývl, M., Dominec, F., Ledoux, G., Dujardin, C. InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties. Physica Status Solidi B. 2018, 255(5), 1-5), 1700464. ISSN 0370-1972. E-ISSN 1521-3951. Available: doi: 10.1002/pssb.201700464
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