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Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition
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SYSNO ASEP 0487097 Document Type A - Abstract R&D Document Type O - Ostatní Title Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition Author(s) Ižák, Tibor (FZU-D) RID
Jirásek, Vít (FZU-D) RID
Vanko, G. (SK)
Dzuba, J. (SK)
Babchenko, O. (SK)
Držík, M. (SK)
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 7 Source Title Book of Abstracts of International Symposium on Surface Science /8./ (ISSS-8). - Tsukuba : SSSJ, 2017 Number of pages 1 s. Publication form Online - E Action International Symposium on Surface Science /8./ (ISSS-8) Event date 22.10.2017 - 26.10.2017 VEvent location Tsukuba Country JP - Japan Event type WRD Language eng - English Country JP - Japan Keywords diamond ; GaN ; Raman spectroscopy ; stress Subject RIV BL - Plasma and Gas Discharge Physics OECD category Fluids and plasma physics (including surface physics) R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation Here, we present technological issues in the deposition of diamond films as a heat spreader for GaN membranes. GaN membranes were fabricated by deep reactive ion etching of Si. Deposition of diamond on the “front” or “back-side” of GaN were performed by MWCVD. The thickness of deposited diamond films were 0.4, 3.5 and 12 um. The diamond/GaN heterostructures were studied in terms of thermally-induced stress analysis by Raman spectroscopy and FEM simulations. The stress was evaluated from the Raman shift of the diamond or GaN peak position within the temperature range from 50 to 400°C. The shift was measured at two positions: at the center and edge of the membrane. While in the case of bottom-side deposition the grown diamond layer was relatively homogeneous and covered the whole 3D hole (i.e. including its sidewalls), in the case of top-side deposition a thicker diamond layer was grown at the membrane center.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018 Electronic address http://www.sssj.org/isss8/timetable.html#poster-program
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