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Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD

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    SYSNO ASEP0483209
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleInfluence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD
    Author(s) Babchenko, O. (SK)
    Vanko, G. (SK)
    Lalinský, T. (SK)
    Huran, J. (SK)
    Haščík, Š. (SK)
    Artemenko, Anna (FZU-D) RID, ORCID
    Ižák, Tibor (FZU-D) RID
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Vincze, A. (SK)
    Marton, M. (SK)
    Vojs, M. (SK)
    Number of authors11
    Source TitleExtended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V. - Bratislava : Comenius University, 2017 / Pinčík E. - ISBN 978-80-2234411-1
    Pagess. 13-14
    Number of pages2 s.
    Publication formPrint - P
    ActionProgress in Applied Surface, Interface and Thin Film Science 2017
    Event date20.11.2017 - 23.11.2017
    VEvent locationFlorence
    CountryIT - Italy
    Event typeWRD
    Languageeng - English
    CountrySK - Slovakia
    Keywordsdiamond ; AlGaN/GaN heterostructures ; XPS ; SIMS
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGBP108/12/G108 GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    AnnotationIn this study, we use electronic structures (circular patterns for transition line measurements and high electron mobility transistors) fabricated on AlGaN/GaN heterostructure. The bare samples and samples passivated by thin (30 nm) SiOx, SiNx and SiC coatings were tested. We used high temperature stable Ir/Al multilayer Schottky metallization for gate contact. Diamond films were grown by selective area deposition from CH4/H2 gas mixture using MWCVD at 500°C. The SEM found that any of used protective coating was able to withstand mutual acting of hydrogen and high temperature during diamond deposition process with 100% effectivity. Nevertheless, even bare sample do not demonstrate so severe surface damage as was reported before. The X-ray photoelectron spectroscopy show high level of surface contamination after diamond deposition in particular by carbon while the SIMS reveal the bulk composition down to AlGaN/GaN heterostructure interface and variation of hydrogen amount.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2018
Number of the records: 1  

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