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Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD
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SYSNO ASEP 0483209 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD Author(s) Babchenko, O. (SK)
Vanko, G. (SK)
Lalinský, T. (SK)
Huran, J. (SK)
Haščík, Š. (SK)
Artemenko, Anna (FZU-D) RID, ORCID
Ižák, Tibor (FZU-D) RID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Vincze, A. (SK)
Marton, M. (SK)
Vojs, M. (SK)Number of authors 11 Source Title Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V. - Bratislava : Comenius University, 2017 / Pinčík E. - ISBN 978-80-2234411-1 Pages s. 13-14 Number of pages 2 s. Publication form Print - P Action Progress in Applied Surface, Interface and Thin Film Science 2017 Event date 20.11.2017 - 23.11.2017 VEvent location Florence Country IT - Italy Event type WRD Language eng - English Country SK - Slovakia Keywords diamond ; AlGaN/GaN heterostructures ; XPS ; SIMS Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation In this study, we use electronic structures (circular patterns for transition line measurements and high electron mobility transistors) fabricated on AlGaN/GaN heterostructure. The bare samples and samples passivated by thin (30 nm) SiOx, SiNx and SiC coatings were tested. We used high temperature stable Ir/Al multilayer Schottky metallization for gate contact. Diamond films were grown by selective area deposition from CH4/H2 gas mixture using MWCVD at 500°C. The SEM found that any of used protective coating was able to withstand mutual acting of hydrogen and high temperature during diamond deposition process with 100% effectivity. Nevertheless, even bare sample do not demonstrate so severe surface damage as was reported before. The X-ray photoelectron spectroscopy show high level of surface contamination after diamond deposition in particular by carbon while the SIMS reveal the bulk composition down to AlGaN/GaN heterostructure interface and variation of hydrogen amount. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
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