Number of the records: 1
ZnO thin films prepared by reactive magnetron sputtering
- 1.
SYSNO ASEP 0480529 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title ZnO thin films prepared by reactive magnetron sputtering Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Purkrt, Adam (FZU-D) RID
Chang, Yu-Ying (FZU-D)
Jirásek, Vít (FZU-D) RID
Prajzler, V. (CZ)
Štenclová, Pavla (FZU-D) ORCID
Nekvindová, P. (CZ)Number of authors 8 Source Title NANOCON 2016. List of Abstracts. - Ostrava : Tanger Ltd., 2016 / Shrbená J. - ISBN 978-80-87294-68-0
S. 33-33Number of pages 1 s. Action NANOCON 2016. International Conference /8./ Event date 19.10.2016 - 21.10.2016 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Keywords ZnO ; reactive magnetron sputtering ; plasma treatment ; PDS ; optical spectroscopy Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GC16-10429J GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation DC reactive magnetron sputtering of metallic target in oxide atmosphere is a simple method of depositing the nominally undoped (intrinsic) polycrystalline layers of metal oxides. We have optimized the deposition of ZnO thin films on fused silica substrates and investigated the localized defect states below the optical absorption edge using photothermal deflection spectroscopy (PDS) that allows to measure the optical absorption down to 0,01% in a broad spectral range from UV to near IR. We have shown that the defect density and thus the electrical resistivity as well as the optical transparency can be significantly increased by annealing in air at 400C and reduced by the hydrogen plasma. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
Number of the records: 1