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Structural and optical properties of Gd implanted GaN with various crystallographic orientations
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SYSNO ASEP 0479677 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Structural and optical properties of Gd implanted GaN with various crystallographic orientations Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Sofer, Z. (CZ)
Klímová, K. (CZ)
Sedmidubský, D. (CZ)
Pristovsek, M. (GB)
Mikulics, M. (DE)
Lorinčík, Jan (URE-Y)
Bottger, R. (DE)
Akhmadaliev, S. (DE)Number of authors 11 Source Title Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 638, SEP (2017), s. 63-72Number of pages 11 s. Publication form Print - P Language eng - English Country CH - Switzerland Keywords GaN implantation ; RBS channelling ; optical properties of Gd implanted GaN Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category 1.3 Physical sciences Subject RIV - cooperation Institute of Radio Engineering and Electronics - Optics, Masers, Lasers R&D Projects GA13-20507S GA ČR - Czech Science Foundation (CSF) GA15-01602S GA ČR - Czech Science Foundation (CSF) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support URE-Y - RVO:67985882 ; UJF-V - RVO:61389005 UT WOS 000411775900009 EID SCOPUS 85025099941 DOI 10.1016/j.tsf.2017.07.036 Annotation Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2018
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