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RESUTS OF INTERACTION OF XUV LASER PULSES OF NANOSECOND DURATION WITH DIFFICULT-ABLATED-MATERIALS
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SYSNO ASEP 0473160 Document Type A - Abstract R&D Document Type O - Ostatní Title RESUTS OF INTERACTION OF XUV LASER PULSES OF NANOSECOND DURATION WITH DIFFICULT-ABLATED-MATERIALS Author(s) Koláček, Karel (UFP-V) RID
Schmidt, Jiří (UFP-V) RID
Frolov, Oleksandr (UFP-V) RID
Štraus, Jaroslav (UFP-V) RID
Matějíček, Jiří (UFP-V) RID, ORCID
Vilémová, Monika (UFP-V) RID, ORCID
Choukourov, A. (CZ)
Kasuya, K. (JP)Source Title 2016 IEEE International Conference on Plasma Science (ICOPS), 43. - Alberta : IEEE, 2016 - ISBN 978-1-4673-9601-1
S. 16211618Number of pages 1 s. Publication form Medium - C Action IEEE - 2016 IEEE International Conference on Plasma Science (ICOPS)/43./ Event date 19.06.2016 - 23.06.2016 VEvent location Banff, Alberta Country CA - Canada Event type WRD Language eng - English Country US - United States Keywords Contracts ; Silicon carbide ; Plasmas ; Physics ; Photonics ; Surface morphology ; X-rays Subject RIV BL - Plasma and Gas Discharge Physics Institutional support UFP-V - RVO:61389021 UT WOS 000391073600420 DOI 10.1109/PLASMA.2016.7534357 Annotation Summary form only given. It is well known that each photon of extreme ultraviolet (XUV) radiation carries energy higher than 20 eV, what is more than any binding energy in a solid state. Provided that energy of these photons is deposited in some localized volume (for example in a surface layer - which is true for XUV and soft X-rays) a non-thermal melting can appear1. This contribution presents experimental results of interaction of focused pulsed XUV laser (λ ~ 47 nm/ ~1.5 ns/150-350 μJ) radiation with tungsten (W), molybdenum (Mo), and silicon carbide (SiC) - three materials considered as perspective armour for plasma facing components in future thermonuclear reactors. It was found that W and Mo behave similarly: during the first shot the laser footprint is covered by melted and re-solidified material, in which circular holes appear - residua of just opened pores, from which explosively escaped pressurized (up to atmospheric pressure) air. The W has tendency to peel off its surface layer: semidetached chip is then more intensely heated (due to locally reduced thermal conductivity) and rounded. The SiC has negligible porosity, and at melting point it de-composes to elements; therefore, the crater morphology can be related to local laser-energy-density above ablation threshold. When more shots are superimposed, in all three investigated materials the crater depth remarkably increases up to ~10 accumulated shots, between 10 and 20 accumulated shots this increase is slowed down, and above 20 it is very small. Workplace Institute of Plasma Physics Contact Vladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975 Year of Publishing 2017
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